(China (Mainland))
Product Summary
The JS28F160C3BD-70 is a StrataFlash memory organized as 32 Mbytes or 16Mwords (256-Mbit, available on the 0.18μm lithography process only), 16 Mbytes or 8 Mwords (128-Mbit), 8 Mbytes or 4 Mwords (64-Mbit), and 4 Mbytes or 2 Mwords (32-Mbit). These devices can be accessed as 8- or 16-bit words. The JS28F160C3BD-70 is organized as one-hundredtwenty- eight 128-Kbyte (131,072 bytes) erase blocks. The JS28F160C3BD-70 is organized as sixtyfour 128-Kbyte erase blocks. A 128-bit Protection Register has multiple uses, including unique flash device identification. The JS28F160C3BD-70 optimized architecture and interface dramatically increases read performance by supporting page-mode reads. This read mode is ideal for non-clock memory systems.
Parametrics
JS28F160C3BD-70 absolute maximum ratings: (1)Temperature under Bias Extended: –40 ℃ to +85 ℃; (2)Storage Temperature: –65 ℃ to +125 ℃; (3)Voltage On Any signal: –2.0 V to +5.0 V; (4)Output Short Circuit Current: 100 mA.
Features
JS28F160C3BD-70 features: (1)Operating Temperature: -40 ℃ to +85 ℃; (2)100K Minimum Erase Cycles per Block; (3)125 ns Initial Access Speed (256 Mbit density only); (4)25 ns Asynchronous Page mode Reads; (5)Absolute Protection with VPEN = GND; (6)Individual Block Locking; (7)Block Erase/Program Lockout during Power Transitions; (8)Multi-Level Cell Technology: High Density at Low Cost; (9)High-Density Symmetrical 128-Kbyte Blocks.
Diagrams
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JS28F00AM29EWL0 |
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JS28F00AP30EF0 |
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IC FLASH 1GBIT 110NS 56TSOP |
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Negotiable |
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